학술논문
Silicon on replacement insulator (SRI) floating body cell (FBC) memory
Document Type
Conference
Author
Source
2010 Symposium on VLSI Technology VLSI Technology (VLSIT), 2010 Symposium on. :165-166 Jun, 2010
Subject
Language
ISSN
0743-1562
2158-9682
2158-9682
Abstract
A 15-nm node floating body cell (FBC) memory was demonstrated utilizing silicon on replacement insulator (SRI) technology on bulk substrate. Highly selective SiGe etch and nano-scale anchors enabled the fabrication of silicon on thin replacement oxide of 12 nm. The memory characteristics show a memory signal of 7 µA and disturb retention time of 20 ms for a 51-nm gate length and 77-nm width device. This is the best FBC memory performance reported on bulk substrate.