학술논문

Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs

Document Type

Conference

Author

Nakamura, S.; DenBaars, S. P.; Speck, J. S.; Schmidt, M. C.; Kim, K-C; Farrell, R. M.; Feezell, D. F.; Cohen, D. A.; Saito, M.; Sato, H.; Asamizu, H.; Tyagi, A.; Zhong, H.; Masui, H.; Fellows, N. N.; Iza, M.; Hashimoto, T.; Fujito, K.

Source

LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE. :898-899 Oct, 2007

Subject

Photonics and Electrooptics
Components, Circuits, Devices and Systems
Light emitting diodes
Gallium nitride
Diode lasers
Laboratories
Chemicals
Piezoelectric polarization
Fabrication
Power generation
Electroluminescence
Power lasers

Language

ISSN

1092-8081

Abstract

Violet InGaN/GaN light emitting diodes (LEDs) was fabricated on semipolar GaN bulk substrates. The output power and external quantum efficiency at a driving current of 20 mA were measured. The first nonpolar m-plane nitride laser diodes (LDs) were realized on low extended defect bulk m-plane GaN substrates.

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