부산대학교 도서관

Continuous shrinking of dynamic random access memory $\langle$DRAM) feature size will inevitably hit unsurmountable barriers, such as sub-10 nm patterning issues, ultra-high aspect ratio (HAR) capacitor and narrow sensing margin, etc. One candidate of promising solutions is the innovation in architecture with three-dimensional (3D) horizontally stacked transistors with capacitors, similar with a 3D NAND-like architecture. However, the process integration scheme and circuit simulation on the 3D Stackable DRAM architecture have been barely reported. In this paper, we systematically introduced a 3D DRAM architecture, integration scheme for the first time. Then we further performed circuit simulation studies on the 3D DRAM, which in return confirm the feasibility of our proposed architecture and show great prospect in DRAM core timing optimization.