학술논문
Proton Irradiation-Induced Reliability Degradation of SiC Power MOSFET
Document Type
Periodical
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 70(8):1838-1843 Aug, 2023
Subject
Language
ISSN
0018-9499
1558-1578
1558-1578
Abstract
The effect of 53-MeV proton irradiation on the reliability of silicon carbide (SiC) power MOSFETs was investigated. Postirradiation gate voltage stress was applied, and early failures in time-dependent dielectric breakdown (TDDB) tests were observed for irradiated devices. The applied drain voltage during irradiation affects the degradation probability observed by TDDB tests. Proton-induced single-event burnouts (SEBs) were observed for devices that were biased close to their maximum rated voltage. The secondary particle production as a result of primary proton interaction with the device material was simulated with the Geant4-based toolkit.