학술논문
Gate-first TiAlN P-gate electrode for cost effective high-k metal gate implementation
Document Type
Conference
Author
Source
Proceedings of Technical Program of 2012 VLSI Technology, System and Application VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on. :1-2 Apr, 2012
Subject
Language
ISSN
1524-766X
1930-8868
1930-8868
Abstract
Gate-first (GF) high-k metal gate (HKMG) for LSTP/LOP logic and DRAM periphery applications requires an efficient and low-cost effective work function (eWF) solution. We demonstrated TiAlN for pFET eWF tuning without appreciable EOT, Jg, and interface degradation. Hence TiAlN is shown to be a key enabler to realize process-friendly and cost-effective GF HKMG implementation.