학술논문
State and Angular Dependence of Single-Event Upsets in an Asymmetric RC-Hardened SRAM Using Deep Trench Capacitors
Document Type
Periodical
Author
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 61(6):3068-3073 Dec, 2014
Subject
Language
ISSN
0018-9499
1558-1578
1558-1578
Abstract
A marked state dependence and significant reduction in SEU cross section with even small increases in incident angle are reported in an asymmetric RC-hardened 90 nm CMOS SRAM. The effects are attributable to the bias dependence and high aspect ratio of the deep trench capacitor sidewall depletion region, exacerbated by process-induced boron depletion. The asymmetric implementation, using capacitive hardening in only one leg of the SRAM cell, led to the appearance of the effect in experimental results.