학술논문
Analysis of the Effects of Boron Transient Enhanced Diffusion on Threshold Voltage Mismatch in Steep Retrograde Doping NMOSFETs with Inserted Oxygen Layers
Document Type
Conference
Author
Source
2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Physical and Failure Analysis of Integrated Circuits (IPFA), 2020 IEEE International Symposium on the. :1-4 Jul, 2020
Subject
Language
ISSN
1946-1550
Abstract
Steep retrograde doping devices were fabricated using undoped epitaxial Si channels with inserted oxygen layers. The effects of boron transient enhanced diffusion (TED) on threshold voltage (Vth) mismatch were investigated. Suppression of boron TED was effective for reducing V th mismatch of steep retrograde doping devices as well as flat doping profile devices.