학술논문

Highly Sensitive, Fast-Responding, and Stable Photodetector Based on ALD-Developed Monolayer TiO2
Document Type
Periodical
Source
IEEE Transactions on Nanotechnology IEEE Trans. Nanotechnology Nanotechnology, IEEE Transactions on. 16(5):880-887 Sep, 2017
Subject
Components, Circuits, Devices and Systems
Computing and Processing
Films
Surface treatment
Photodetectors
Substrates
Surface morphology
Atomic layer deposition
Electronic mail
photodetectors
titanium oxide
Language
ISSN
1536-125X
1941-0085
Abstract
In this paper, high-quality wafer-scale monolayer TiO 2 films were synthesized via atomic layer deposition and their main characteristics were investigated. The deposited TiO 2 monolayer films were subsequently utilized in photodetectors (PDs), which demonstrated considerable optoelectronic performance with ultrafast response (30 μ s) and recovery (63 μ s) time, high on/off ratio (220), good reversibility, and great long-term stability (less than 2% variation after 1000 cycles). The photoresponsivity ( R λ ) and external quantum efficiency of 0.352 A/W and 109.12% were, respectively, attained at the incident laser power density of 118 mW/cm 2 ( $\lambda = \text{400}\; \text{nm}$) and $V_{{\rm{DS}}} = \text{1}\; \text{V}$. These photoelectrical characteristics of the monolayer TiO 2 -based PDs confirmed that this TiO 2 nanostructure could be an excellent candidate for various smart and portable applications such as UV-detection devices, photoswitches, high-speed optical communications, and image sensors.