학술논문

Strip Detectors Processed on High-Resistivity 6-inch Diameter Magnetic Czochralski Silicon (MCz-Si) Substrates
Document Type
Periodical
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 61(1):611-618 Feb, 2014
Subject
Nuclear Engineering
Bioengineering
Detectors
Strips
Silicon
Voltage measurement
Current measurement
Semiconductor device measurement
High energy physics
radiation hardness
silicon radiation sensors
strip detector
Language
ISSN
0018-9499
1558-1578
Abstract
Tracking detectors for future high-luminosity particle physics experiments have to be simultaneously radiation hard and cost efficient. This paper describes processing and characterization of ${\bf p}^+ /{\bf n}^-/{\bf n}^+ $ (n-type silicon bulk) detectors made of high-resistivity Magnetic Czochralski silicon (MCz-Si) substrates with 6-inch wafer diameter. The processing was carried out on a line used for large-scale production of sensors using standard fabrication methods, such as implanting polysilicon resistors to bias individual sensor strips. Special care was taken to avoid the creation of Thermal Donors (TD) during processing. The sensors have a full depletion voltage of 120-150 V which are uniform over the investigated sensors. All of the leakage current densities were below ${\bf 55}~\hbox{\bf{nA/cm}}^{\bf 2}$ at 200 V bias voltage. A strip sensor with 768 channels was attached to readout electronics and tested in particle beam with a data acquisition (DAQ) similar to the system used by the CMS experiment at the CERN LHC. The test beam results show a signal-to-noise ratio greater than 40 for the test beam sensor. The results demonstrate that MCz-Si detectors can reliably be manufactured in the industrial scale semiconductor process.