학술논문
New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors
Document Type
Periodical
Author
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(2):812-818 Feb, 2023
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
Experimental evidence and analysis in this work provide new insights into the fast switching process in GeAsTe ovonic threshold switching (OTS) selectors. For the first time, the full switching- OFF process, covering the defect cluster shrinking and rupture stages, can be measured and characterized. Two distinct switch- OFF mechanisms and their dependence on the total impedance of the selector and resistor (1S1Rs) circuit are identified. The impact of series resistance value on the switching process, the 1S1Rs operation, and the underlying mechanisms can be explained by the dynamic resistance of OTS that is induced by the transition of defect clusters. This research sheds new light on OTS switching mechanism and its impact on 1S1Rs operation.