학술논문
Simulation-based DRAM Design Technology Co-Optimization: Why Random Dopant Fluctuations Matter
Document Type
Conference
Author
Source
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2021 International Conference on. :188-191 Sep, 2021
Subject
Language
ISSN
1946-1577
Abstract
This paper presents a TCAD-based analysis of DRAM retention time variability. Both statistical and process-induced variability are considered. We highlight that discrete dopant fluctuations play a fundamental role in determining the leakage trends across the space of process variations and, therefore, they should be taken into account for an accurate and physics-based evaluation of yield and reliability of ultra-scaled DRAMs.