학술논문
Barrier properties of electroless deposit of Co-W-P alloy
Document Type
Conference
Source
2019 International Conference on Electronics Packaging (ICEP) Electronics Packaging (ICEP), 2019 International Conference on. :190-193 Apr, 2019
Subject
Language
Abstract
It is known that the Co alloy deposit has high electromigration resistance and thermal diffusion resistance to Cu. We could prepare electroless deposit of Co-W-P with different W contents on Cu substrate by changing the Co-W-P bath parameter. After heat treatment under 200-400°C with Air or N 2 conditions, Cu diffusion to the surface was measured. Co-W-P layer has excellent barrier property for Cu in N 2 heat treatment. However, Cu diffused to the surface when whole of Co-W-P (W=0 and 11wt.%) layer was oxidized in high temperature with air condition. The results indicate that oxidized layer of Co-W-P deposit has no barrier effect for Cu. In Co-W-P deposit in the condition of high W content (W=23wt.%), an unoxidized layer still remained and only a small amount of Cu was detected on the surface. We confirmed that Co-W-P (W=23wt.%) was difficult to oxidize and Cu diffusion was suppressed by preventing oxidization of the Co-W-P deposit.