학술논문
Mechanism of drain disturb in SONOS flash EEPROMs
Document Type
Conference
Author
Source
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Reliability physics Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International. :186-190 2005
Subject
Language
ISSN
1541-7026
1938-1891
1938-1891
Abstract
We investigate the mechanism of drain disturb in SONOS flash memory cells. Our results show that drain disturb can be a serious concern in a programmed state and is caused by injection of holes from the substrate into the nitride. We identify the key factors responsible for this to be band-to-band tunneling at the drain junction and impact ionization of the channel leakage current.