학술논문
Floating Gate super multi level NAND Flash Memory Technology for 30nm and beyond
Document Type
Conference
Author
Kamigaichi, T.; Arai, F.; Nitsuta, H.; Endo, M.; Nishihara, K.; Murata, T.; Takekida, H.; Izumi, T.; Uchida, K.; Maruyama, T.; Kawabata, I.; Suyama, Y.; Sato, A.; Ueno, K.; Takeshita, H.; Joko, Y.; Watanabe, S.; Liu, Y.; Meguro, H.; Kajita, A.; Ozawa, Y.; Watanabe, T.; Sato, S.; Tomiie, H.; Kanamaru, Y.; Shoji, R.; Lai, C.H.; Nakamichi, M.; Oowada, K.; Ishigaki, T.; Hemink, G.; Dutta, D.; Dong, Y.; Chen, C.; Liang, G.; Higashitani, M.; Lutze, J.
Source
2008 IEEE International Electron Devices Meeting Electron Devices Meeting, 2008. IEDM 2008. IEEE International. :1-4 Dec, 2008
Subject
Language
ISSN
0163-1918
2156-017X
2156-017X
Abstract
A Floating Gate NAND Flash Memory Technology for 30nm and beyond has been successfully developed. Wide program/erase window, tight natural threshold voltage (Vth) distribution, and good cell reliabilities such as program disturb, program/erase endurance and data retention are successfully demonstrated, which are essential to realize Super MLC.