학술논문
P, Sb and Sn ion implantation with laser melt-LPC (liquid phase crystallization) for high activation n+ ultra shallow junction in Ge epilayer and surface strain-Ge formation for mobility enhancement
Document Type
Conference
Author
Source
2015 15th International Workshop on Junction Technology (IWJT) Junction Technology (IWJT), 2015 15th International Workshop on. :15-18 Jun, 2015
Subject
Language
Abstract
Ultra-shallow n+ ion implanted junctions with high dopant activation in high mobility thin Ge epilayer was realized by rapid and controlled Ge melt depth using 308nm Excimer laser annealing. Extremely high Sb activation of 1E21/cm3 for 10nm USJ is > 3x higher than best P activation level of 3E20/cm3 for a 10nm USJ. High level of surface Sb also induced surface tensile strain-Ge which degraded electron mobility while Sn induced surface compressive strain-Ge improving Sb electron mobility by 2x but degraded P electron mobility by 3x. Differential Hall layer mobility depth plots shows Sn implant improved the mobility uniformity in the top 30nm surface. Controlled Ge melt depth can be extended to 7nm n+ USJ using sub-keV ultra-low energy implantation and results will be shown in the future with n+ activation of 1E21/cm3.