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22nm node p+ junction scaling using B36H44 and laser annealing with or W/O PAI
Document Type
Conference
Author
Borland, John; Tanjyo, Masayasu; Hamamoto, Nariaki; Nagayama, Tsutomu; Muthukrishnan, Shankar; Zelenko, Jeremy; Mirshad, Iad; Johnson, Walt; Buyuklimanli, Temel
Source
2009 17th International Conference on Advanced Thermal Processing of Semiconductors Advanced Thermal Processing of Semiconductors, 2009. RTP '09. 17th International Conference on. :1-5 Sep, 2009
Subject
Power, Energy and Industry Applications
Robotics and Control Systems
Photonics and Electrooptics
Annealing
Implants
Laser theory
Electrical resistance measurement
Surface resistance
Optical materials
Amorphous materials
Surface emitting lasers
Degradation
Silicon
Language
ISSN
1944-0251
1944-026X
Abstract
B 36 H 44 molecular dopants were implanted at 100eV and 1E15/cm 2 B equivalent energy and dose to achieve Xj

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