학술논문
Influence of hydrogen annealing on NBTI performance
Document Type
Conference
Author
Source
2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the. :1-4 Jul, 2008
Subject
Language
ISSN
1946-1542
1946-1550
1946-1550
Abstract
The effect of hydrogen annealing after Local Interconnect Layer (LIL) formation and before Contact/Metal was evaluated with negative bias temperature instability (NBTI), electrical testing and yield in 0.14μm embedded flash. No significant difference was observed in electrical testing and yield amongst all splits. However, difference was observed from NBTI test. This paper mainly summarizes the influence of hydrogen annealing on NBTI performance.