학술논문

Improving the Electrical Performance of RF-Sputtered InSnZnO Thin-Film Transistors via Octadecylphosphonic Acid Self-Assembled Monolayer
Document Type
Conference
Source
2023 IEEE International Flexible Electronics Technology Conference (IFETC) Flexible Electronics Technology Conference (IFETC), 2023 IEEE International. :01-04 Aug, 2023
Subject
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
General Topics for Engineers
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Performance evaluation
Water
Doping
Electric variables
Thin film transistors
Transistors
Flexible electronics
Amorphous-InSnZnO (ITZO)
thin-film transistors (TFTs)
octadecylphosphonic acid (ODPA)
self-assembled monolayers (SAM)
high mobility
Language
Abstract
RF-sputtered InSnZnO (ITZO) thin-film transistors (TFTs) coated with octadecylphosphonic acid (ODPA) self-assembled monolayer (SAM) is fabricated and characterized for the first time. The ODPA-treated ITZO TFTs exhibit excellent device electrical characteristics with high field-effect mobility of ~86.74 cm 2 V -1 s -1 , steep subthreshold swing of ~0.21 mV/dec, and large on/off current ratio of ~6.53x10 7 . The excellent device performance enhanced by introducing ODPA SAM is mainly attributed to the prevention of oxygen and water vapor into the active layer, surface doping effect and dangling bond reparation.