학술논문
World-most energy-efficient MRAM technology for non-volatile RAM applications
Document Type
Conference
Author
Lee, T. Y.; Lee, J. M.; Kim, M. K.; Oh, J. S.; Lee, J. W.; Jeong, H. M.; Jang, P. H.; Joo, M. K.; Suh, K.; Han, S. H.; Jeong, D.-E.; Kai, T.; Jeong, J. H.; Park, J.-H.; Lee, J. H.; Park, Y. H.; Chang, E. B.; Park, Y. K.; Shin, H. J.; Ji, Y. S.; Hwang, S. H.; Nam, K. T.; Kwon, B. S.; Cho, M. K.; Seo, B. Y.; Song, Y. J.; Koh, G. H.; Lee, K.; Lee, J.-H.; Jeong, G. T.
Source
2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :10.7.1-10.7.4 Dec, 2022
Subject
Language
ISSN
2156-017X
Abstract
We present the most energy-efficient 16 Mb non-volatile RAM (nvRAM) product with nearly unlimited endurance by using 28-nm embedded MRAM (eMRAM) technology. Among commercially available standalone nvRAM products, this product features the smallest package dimension of 30 mm 2 at 16 Mb and best-in-class active power of 14 mW (read) and 27 mW (write). By extensive package testing, endurance over 1E14 cycles at - 25 °C and 10-years data retention at 89 °C have also been verified. Extending 28-nm eMRAM technology to 14-nm FinFET resulted in 33% area scaling and 2.6× faster read cycle time. This proves the potential of eMRAM technology as a low-leakage working memory solution for SoC applications.