부산대학교 도서관

Planar fully depleted (FD) devices with thin Buried Oxide (BOX) offer the unique ability to incorporate effective back biasing which is a key enabler to build a versatile multi-Vt technology. From a dynamic standpoint, forward back bias lowers Vt and thus boost device performance, whereas reverse back bias increases Vt and thus decreases leakage [1]. From a static point of view the back gate allows fine Vt tuning. Here we propose and evaluate a back gate implant scheme that enables a full use of the back bias.