학술논문
A 49.2 GHz HEMT static frequency divider using an analog/microwave design approach
Document Type
Conference
Author
Source
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd Annual Technical Digest 2000. (Cat. No.00CH37084) GaAs IC symposium GaAs IC Symposium, 2000. 22nd Annual. :85-87 2000
Subject
Language
ISSN
1064-7775
Abstract
Although current gain cutoff frequencies (f/sub T/) of both HEMT and HBTs are comparable and f/sub MAX/ for HEMTs is considerably higher, the highest speed static dividers have been reported in InP-based HBT technology. Higher transconductance of HBTs at smaller sizes compared to HEMTs results in compact circuits and lower interconnect load. Careful management of this interconnect load through an innovative microwave/analog design approach has resulted in a static divide-by-two circuit in InP HEMT technology operating at 49.2 GHz. To our knowledge this is the highest frequency of operation for a fully static divider in HEMT technology - even exceeding results obtained on faster devices with smaller gate lengths.