학술논문
GaN HFET technology for RF applications
Document Type
Conference
Author
Source
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd Annual Technical Digest 2000. (Cat. No.00CH37084) GaAs IC symposium GaAs IC Symposium, 2000. 22nd Annual. :11-14 2000
Subject
Language
ISSN
1064-7775
Abstract
GaN HFET has emerged as a very promising device technology for next-generation microwave applications. The last several years have witnessed a tremendous progress in the development of this technology, from material growth to circuit demonstration. Devices and circuits with excellent output power, power density, efficiency, and noise figure have been achieved. This talk reviews the current status of GaN HFET technology.