학술논문
A high gain, low power MMIC LNA for Ka-band using InP HEMTs
Document Type
Conference
Author
Source
1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001) Radio frequency integrated circuits Radio Frequency Integrated Circuits (RFIC) Symposium, 1999 IEEE. :149-152 1999
Subject
Language
ISSN
1097-2633
Abstract
Compact Ka-Band MMIC low noise amplifiers have been developed with high gain, low VSWR and low power dissipation using 0.12 /spl mu/m InP HEMT technology. A five stage single-ended LNA achieved 40 dB of gain and a 1.4 dB average noise figure over the 27-30 GHz band with an input return loss in excess of 15 dB. The 3/spl times/1 mm/sup 2/ MMIC consumes less than 40 milliwatts of dc power.