학술논문
A high-gain monolithic D-band InP HEMT amplifier
Document Type
Conference
Author
Source
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) GaAs IC Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual. :41-44 1998
Subject
Language
ISSN
1064-7775
Abstract
A three-stage monolithic amplifier has been developed which exhibits a measured small-signal gain of 30 dB at 140 GHz. The circuit employs 0.1-/spl mu/m AlInAs-GaInAs-InP HEMT devices with 150 /spl mu/m gate peripheries, and occupies a total area of 2 mm/sup 2/. Measured gain exceeds 10 dB from 129-157 GHz and 5 dB up to 184 GHz. This is the highest gain per stage ever reported in a transistor amplifier operating at these frequencies.