학술논문
W-band InP-based HEMT MMIC power amplifiers using finite-ground CPW design
Document Type
Conference
Author
Source
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) GaAs IC Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual. :37-40 1998
Subject
Language
ISSN
1064-7775
Abstract
In this paper we report on the development of W-band MMIC power amplifiers using 0.1 /spl mu/m AlInAs-GaInAs-InP HEMT technology and finite-ground coplanar waveguide (FGCPW) designs. Two single-stage single-ended W-band MMICs using 150 /spl mu/m and 250 /spl mu/m wide HEMTs were designed, fabricated and tested. The results show that the small signal performance of the MMIC using the 150 /spl mu/m wide HEMT has a linear gain of more than 12 dB at 94 GHz. The corresponding amplifier exhibits an output power of 13.8 dBm with a power-added efficiency of 23%. The MMIC using the 250 /spl mu/m wide HEMT demonstrates 9 dB linear gain and the amplifier has a maximum output power of 16.7 dBm with 17.5% power added efficiency at 94 GHz. These power amplifiers are the first ever reported using a CPW configuration at this frequency.