부산대학교 도서관

A 5-watt, 10-mc, silicon power transistor has been developed. The device, made by solid-state diffusion, uses the intrinsic-barrier structure. Although primarily designed as a 5-watt, 10-mc oscillator, some laboratory samples have delivered as much as one watt of power when used as oscillators at 100 mc. As an amplifier at 10 mc, a unilateral gain in excess of 20 db is obtained at the 5-watt output level. The design, static characteristics, characterization in terms of an equivalent circuit, and performance data are given.