학술논문
Measurement of Internal Temperature Rise of Transistors
Document Type
Periodical
Author
Source
Proceedings of the IRE Proc. IRE Proceedings of the IRE. 46(6):1207-1208 Jun, 1958
Subject
Language
ISSN
0096-8390
2162-6634
2162-6634
Abstract
A method for measuring the internal temperature rise of a transistor, making use of the variation of alpha with temperature, is described. It consists of a comparison of static characteristics taken at constant temperature by means of a low-averagepower pulse technique and characteristics taken under continuous power dissipation. The advantage of the method lies in the fact that measurement is made at temperature equilibrium in the hottest portion of the transistor, and is made with current and voltage distributions essentially identical with those encountered in normal operation.