학술논문
Unitraveling-Carrier-Photodiode-Integrated High-Electron-Mobility Transistor for Photonic Double-Mixing
Document Type
Periodical
Source
Journal of Lightwave Technology J. Lightwave Technol. Lightwave Technology, Journal of. 39(10):3341-3349 May, 2021
Subject
Language
ISSN
0733-8724
1558-2213
1558-2213
Abstract
We newly propose and experimentally investigate an InGaAs-channel high-electron-mobility transistor integrated with a unitraveling-carrier photodiode (UTC-PD) structure on its source side for an efficient optical-to-wireless carrier frequency downconversion utilizing its photonic double-mixing functionality. It is demonstrated that the double-mixing conversion gain is significantly enhanced by 20 dB compared with a standard HEMT, owing to the integration of the UTC-PD structure. The device operation principle expected from the device structure is confirmed through measured DC characteristics and photomixing/double-mixing characteristics in the millimeter-wave region. The feasibility of the device for practical use in future optical-wireless convergence networks is addressed.