학술논문
A Digital Gate Driver IC with a Digitally Adjustable DESAT and Parameter Adjustment Method for False Detection Prevention and Short-Circuit Protection of 1200V 180A SiC Module
Document Type
Conference
Source
2024 IEEE Applied Power Electronics Conference and Exposition (APEC) Applied Power Electronics Conference and Exposition (APEC), 2024 IEEE. :1130-1134 Feb, 2024
Subject
Language
ISSN
2470-6647
Abstract
This paper presents a digitally adjustable DESAT and its parameter adjustment method. The DESAT circuit has adjustable blanking time and detection threshold voltage, and is implemented in the CMOS process. Using the proposed method, DESAT parameters are adjusted for a 1200V 180A SiC module to provide protection in the event of a short-circuit while preventing false detection during normal switching. In the HSF (hard switching fault) case, short-circuit protection is achieved with a short-circuit duration of 2.35us and a peak voltage of 702V.