학술논문
Fitting a model to floating gate prompt charge loss test data for the samsung 8 Gb SLC NAND flash memory
Document Type
Conference
Author
Source
2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Radiation and Its Effects on Components and Systems (RADECS), 2016 16th European Conference on. :1-6 Sep, 2016
Subject
Language
Abstract
A recent model provides risk estimates for the deprogramming, of initially programmed floating gates, via prompt charge loss produced by an ionizing radiation environment. The environment can be a mixture of electrons, protons, and heavy ions. The model requires several input parameters. Parameters intended to produce conservative risk estimates for the Samsung 8 Gb SLC NAND flash memory are given, subject to some qualifications.