학술논문
Radiation Effects in Flash Memories
Document Type
Periodical
Author
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 60(3):1953-1969 Jun, 2013
Subject
Language
ISSN
0018-9499
1558-1578
1558-1578
Abstract
We review ionizing radiation effects in Flash memories, the current dominant technology in the commercial non-volatile memory market. A comprehensive discussion of total dose and single event effects results is presented, concerning both floating gate cells and peripheral circuitry. The latest developments, including new findings on the mechanism underlying upsets due to heavy ions and destructive events, are illustrated.