학술논문
Simulation-Based Switching Performance of Self-Heating Effect on SiC-based Power-Electronic Circuits
Document Type
Conference
Author
Source
2023 International Symposium on Devices, Circuits and Systems (ISDCS) Devices, Circuits and Systems (ISDCS), 2023 International Symposium on. 1:01-03 May, 2023
Subject
Language
ISSN
2767-9837
Abstract
The high-frequency power-switch-driven self-heating effect on the conduction and switching performance of the 4H- Silicon Carbide (SiC) DMOSFET-based general-purpose inverter stack (GPIS) circuit has been investigated through an integrated device and circuit simulation approach. This study presents the empirical significance of the blocking switch with an embedded body diode in the H-bridge converter circuit on switching and conduction loss with instantaneous temperature rise. It has been explored that an insignificant self-heating effect on the switching performance and non-negligible post-switching body-diode carried conduction loss rise with the real-time increase of device temperature during circuit operation.