학술논문

RF performance of Standard, High-Resistivity and Trap-Rich Silicon substrates down to cryogenic temperature

Document Type

Conference

Author

Berlingard, Q.; Moulin, M.; Michel, J.-P.; Fache, T.; Charlet, I.; Plantier, C.; Chalupa, Z.; Lugo-Alvarez, J.; Raskin, J.-P.; Hutin, L.; Casse, M.

Source

ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), ESSDERC 2023 - IEEE 53rd European. :148-151 Sep, 2023

Subject

Aerospace
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
General Topics for Engineers
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Radio frequency
Q-factor
Temperature
Limiting
Surface resistance
Cryogenics
Silicon
RF substrates
cryogenic measurement
Standard silicon substrate
High-Resistivity silicon substrate
Trap-Rich silicon substrate
CryoCMOS
inductors
High-Q inductor

Language

ISSN

2378-6558

Abstract

We investigate the temperature-dependent RF response of different types of silicon substrates (standard, high-resistivity and trap-rich) through measurements performed on BEOL-embedded inductors from room temperature down to 7K. For the first time, we observe that the performance ranking between substrates, well known at 300K, is altered in cryogenic conditions (T

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