학술논문
Low-noise InP-based avalanche photodiodes with an impact-ionization-engineered multiplication region
Document Type
Conference
Author
Source
The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society IEEE/LEOS annual meeting conference Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE. 2:488-489 vol.2 2002
Subject
Language
ISSN
1092-8081
Abstract
We report the direct growth of impact-ionization engineering (I/sub 2/E) structures using InAlAs and InAlGaAs quaternary in the multiplication regions. Compared to homojunction InAlAs and InP APDs, lower excess noise and comparable dark current have been achieved.