학술논문
Study of Enhancement-Mode Tri-Gate InAs HEMTs for Low Noise Application
Document Type
Conference
Author
Source
2019 14th European Microwave Integrated Circuits Conference (EuMIC) Microwave Integrated Circuits Conference (EuMIC), 2019 14th European. :204-207 Sep, 2019
Subject
Language
Abstract
An enhancement-mode tri-gate InAs HEMT is investigated for low noise application in this paper. The 3-D trigate structure is sidewall-gate-metal connected to InAlAs layers, the gate connection to the InAlAs layers increases their potential to the positive direction with increasing the gate bias, resulting gate control ability enhancement. Compared with planar device, the tri-gate device shows high transconductance and low noise figure. The enhancement-mode tri-gate device exhibits excellent low noise Figure with less than 3.5 dB when the device operation frequency range of 18 GHz to 50 GHz.