학술논문

Characteristics of HfZrOx gate stack engineering for reliability improvement on 28nm HK/MG CMOS technology

Document Type

Conference

Author

Tsai, C.H.; Yang, C.W.; Hsu, C.H.; Lai, C.M.; Lo, K.Y.; Chen, C.G.; Huang, R.M.; Tsai, C.T.; Hung, L. S.; You, J.W.; Hung, W.H.; Chen, T.F.; Cheng, O.; Wu, J. Y.; Tzou, S.F.; Liang, C.W.; Chen, I.C.

Source

Proceedings of Technical Program of 2012 VLSI Technology, System and Application VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on. :1-2 Apr, 2012

Subject

Components, Circuits, Devices and Systems
Communication, Networking and Broadcast Technologies
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Zirconium
Hafnium compounds
Films
Logic gates
Semiconductor device reliability

Language

ISSN

1524-766X
1930-8868

Abstract

High-K/Metal-Gate (HK/MG) reliability TDDB and BTI are investigated systematically for the first time through HfZrO x gate stack engineering. To meet reliability requirements, it is shown that the HK film thickness, the position and concentration of a Zr dopant, utilizing post deposition anneal (PDA), and decoupled plasma nitridation (DPN) are important factors.

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