학술논문
PZT thin film preparation on Pt/Ti electrode by RF magnetron sputtering
Document Type
Conference
Author
Source
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Ferroelectrics applications Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on. 1:451-454 vol.1 1996
Subject
Language
Abstract
We have investigated the structural and electrical properties of lead-zirconate-titanate (PZT) thin films prepared on Pt/Ti/Si substrates by rf magnetron sputtering. The as-deposited 1.0 /spl mu/m-thick thin films were completely crystallized into the perovskite phase at 500/spl deg/C for 60 min in oxygen. The structure and the lattice parameter, the dielectric loss and the dielectric constant have been examined as a function of annealing temperature and frequency, respectively. The 1.0 /spl mu/m-thick train film annealed at 650/spl deg/C for 60 min has a remnant polarization Pr of 13.2 /spl mu/C/cm/sup 2/ and a coercive field Ec of 55.5 kV/cm, the dielectric constant decreases from 950 to 500 as frequency increases from 10 Hz to 1000 kHz. The dielectric constant has the lowest value when the frequency is 20 kHz The 0.47 /spl mu/m-thick thin film annealed at 600/spl deg/C for 60 min has a remnant polarization Pr of 16.3 /spl mu/C/cm/sup 2/ and a coercive fields Ec of 117.6 kV/cm.