학술논문
Stability and Reliability for Zinc-Oxide Thin-Film Transistors by O2 Plasma Treatment
Document Type
Conference
Author
Source
2014 International Symposium on Computer, Consumer and Control Computer, Consumer and Control (IS3C), 2014 International Symposium on. :462-465 Jun, 2014
Subject
Language
Abstract
This work reports a simple and efficient route for the deposition of highly ordered and aligned ZnO film (~ 15-20 nm thick) as the semi conducting channel layer for transparent thin-film transistor (TFT) applications on silicon as well as on flexible polyimide (PI) substrate. The effect of oxygen (O2) plasma power of 18 W followed by low temperature (~300 °C) annealing at hot plate was studied to enhance the properties of ZnO-TFTs in terms of on/off current ratio and sustainability. ZnO based TFTs on silicon showed on/off current ratio of 106 without O2 plasma and 107 with O2 plasma. Then placed the TFT devices one year long to measure reliability, show on/off current ratio of 103 without O2 plasma and 107 with O2 plasma. The process is a promising method for fabricating high-perform ZnO-TFTs on plastic substrate could open up the way to be used the process in future.