부산대학교 도서관

This study introduces a compact model for reverse mode impact ionization current in Laterally-Diffused-Metal-Oxide-Semiconductor (LDMOS) transistors. Due to the asymmetrical nature of LDMOS transistors, magnitude of substrate current under forward $(V_{ds} \gt 0V)$ and reverse $(V_{ds} \lt 0V)$ modes can differ by orders of magnitude. We discuss the reverse impact ionization current model in this work which is then integrated into the BSIM-BULK high voltage compact model framework. The efficacy of the model is supported by calibrated TCAD simulations and model to hardware correlation is also presented.