학술논문
Nearly Ideal Subthreshold Swing in Monolayer MoS₂ Top-Gate nFETs with Scaled EOT of 1 nm
Document Type
Conference
Author
Lee, Tsung-En; Su, Yuan-Chun; Lin, Bo-Jiun; Chen, Yi-Xuan; Yun, Wei-Sheng; Ho, Po-Hsun; Wang, Jer-Fu; Su, Sheng-Kai; Hsu, Chen-Feng; Mao, Po-Sen; Chang, Yu-Cheng; Chien, Chao-Hsin; Liu, Bo-Heng; Su, Chien-Ying; Kei, Chi-Chung; Wang, Han; Philip Wong, H.-S.; Lee, T. Y.; Chang, Wen-Hao; Cheng, Chao-Ching; Radu, Iuliana P.
Source
2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :7.4.1-7.4.4 Dec, 2022
Subject
Language
ISSN
2156-017X
Abstract
Transistor scaling enabled by gate length scaling requires EOT scaling to less than 1 nm thickness [1]. This work successfully integrates Hf-based ALD higher-k dielectrics with CVD-grown monolayer (1L) MoS 2 to build top-gate nFET with EOT ~1 nm with nearly ideal subthreshold swing of 68 mV/dec. The gate stack described here achieves a high $\varepsilon_{\mathrm{e}\mathrm{f}\mathrm{f}}$ ~13.53, a large $\mathrm{E}_{\mathrm{B}\mathrm{D}}$ ~12.4MV/cm, and excellent leakage current density. This is a remarkable performance among reported gate dielectrics on the transition metal dichalcogenides (TMDs) on which it is notoriously difficult to deposit a pinhole-free dielectric.