학술논문
NLS based Modeling and Characterization of Switching Dynamics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides
Document Type
Conference
Source
2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :15.4.1-15.4.4 Dec, 2021
Subject
Language
ISSN
2156-017X
Abstract
In this work, we have conducted an NLS-based Monte-Carlo modeling and characterization for antiferroelectric/ferroelectric (AFE/FE) Hf 1- x Zr x O 2 (HZO). With the coexistence of orthorhombic-phase (FE) and tetragonal-phase (AFE) grains and the crucial consideration of back-switching field, our generalized NLS model is capable of describing the switching dynamics and frequency response of AFE/FE HZO. Our experimentally verified model is adequate for modeling HZO with certain AFE and FE properties, which can be beneficial to future memory applications and neuromorphic computing.