학술논문
Frequency Performance Improvements for SLCFET Amplifier Through Device Scaling
Document Type
Conference
Author
Source
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2021 IEEE. :1-4 Dec, 2021
Subject
Language
Abstract
This paper reports frequency performance improvements in Superlattice Castellated Field Effect Transistor (SLCFET) amplifier through device scaling. Device scaling incorporates the variations in castellation ridge width, castellation trench width, castellation length, gate stem length, gate hat length, gate offset, gate dielectric thickness, and passivation thickness. Highest ${f_{T}}$ and F max (70GHz/150GHz) values were achieved on devices with shortest castellation length. Shortening castellated access region reduces series resistance resulting in improved frequency performance. Thinner gate dielectric improves transconductance resulting enhancement in frequency performance as well.