부산대학교 도서관

This report describes the second generation (Gen2) of the Superlattice Castellated Field Effect Transistor (SLCFET) amplifier. The SLCFET amplifier is a new device that uses 3-dimensional device geometry to modulate a superlattice of multiple AlGaN/GaN channels. The superlattice enables extremely low source and drain resistances and high output current and power density, while the 3-dimensional, low-resistance T-gate provides good electrostatic control and high gain. The wide bandgap material system also provides a high breakdown voltage. These properties lead to a robust, high performance device for low-noise and power amplifier applications. Process improvements allow the Gen2 device to reach F T /F MAX of 76/130 GHz. At 10 GHz, noise characterization achieves a minimum NF min of 0.699 dB and load pull measurements achieve over 70% peak Power Added Efficiency (PAE).