학술논문
SLCFET Amplifier Performance Improvements Using an ALD TiN T-Gate Process
Document Type
Conference
Author
Source
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2022 IEEE. :120-123 Oct, 2022
Subject
Language
ISSN
2831-4999
Abstract
The super-lattice castellated field-effect transistor (SLCFET) is a multi-channel AlGaN/GaN HEMT device emerging as a technology platform for RF front ends, integrating world-class RF switches with high-performance RF amplifiers on the same wafer. This paper reports the performance results of a SLCFET amplifier device using an ALD TiN T-gate, which are improved with respect to previously reported data, with measured f t and f max up to 99 and 152 GHz respectively. The improvement is attributed to a reduced gate capacitance due to a higher T-gate hat without significant penalty of loss in gate control or increase of gate resistance. We also report W-band (94 GHz) large signal load-pull performance of the device with 4.33 W/active mm output power and 19.2% PAE. The process also demonstrates excellent DC/RF dispersion gate lag