학술논문
Research and Development of InP, GaN and InSb-Based HEMTs and MMICs for Terahertz-Wave Wireless Communications
Document Type
Conference
Author
Source
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Compound Semiconductor Integrated Circuit Symposium (CSICS), 2016 IEEE. :1-4 Oct, 2016
Subject
Language
ISSN
2374-8443
Abstract
We have improved the performances of InP-based HEMTs and MMICs for terahertz-wave wireless communications using a high frequency carrier wave around 300 GHz in an R&D program launched by the Ministry of Internal Affairs and Communications, Japan (MIC). Furthermore, we also have developed GaN and InSb-based HEMTs in another research. In this paper, we demonstrated the performances of InP, GaN and InSb-HEMTs, and InP-MMICs for power amplifier and low-noise amplifier operated around 300 GHz.