학술논문
Characterization of an AlO$_{\rm x}$ Tunneling Barrier in a Magnetic Tunnel Junction by a Surface Plasmon Resonance Spectroscopy Technique
Document Type
Periodical
Author
Source
IEEE Transactions on Magnetics IEEE Trans. Magn. Magnetics, IEEE Transactions on. 45(1):60-63 Jan, 2009
Subject
Language
ISSN
0018-9464
1941-0069
1941-0069
Abstract
We measured tunneling magnetoresistance (TMR) in a magnetic tunnel junction as a function of temperature. We used surface plasmon resonance spectroscopy (SPRS)—one of the most useful tools in the analysis of dielectric function in a thin tunneling barrier—to study the correlation of AlO$_{\rm x}$ barrier quality with the temperature dependent behavior of the TMR ratio. The experimental SPRS analysis suggests that the decrease of the TMR ratio starting at 150 K is caused by residual Al metallic defects distributed within the insulating AlO$_{\rm x}$ barrier. We checked this result by measuring the junction resistances in parallel and antiparallel states.