부산대학교 도서관

Deep ultraviolet (DUV) light emitting diodes (LED) have matured in the past years but their efficiency still provides space for improvement. Below 265nm emission wavelength the quantum efficiency has been found to decrease almost exponentially. This is commonly attributed to the low light extraction efficiency and the small internal quantum efficiency. Increasing the internal quantum efficiency in this regime requires a deep understanding of the physical processes in the active region. To this end, we investigate the emission spectra of a mixed quantum well DUV LED emitting at 233nm and 250nm wavelength by means of physics based simulations. By comparing the simulations with measured spectra we estimate figures of physical properties entering the carrier transport. In particular we localize the hole mobility in the doped Aluminium Gallium Nitride barriers of the active region.