부산대학교 도서관

Power electronic systems employing wide-bandgap GaN transistors promise high efficiency operation and power density but require minimized parasitic circuit elements and an effective cooling concept. This article presents a half-bridge module integrating two 600 V/170 mΩ gallium nitride (GaN) high-electron mobility transistors with their gate drive stages and a fraction of the dc-link capacitance on a patterned multilayer polycrystalline AlN-substrate. The high-voltage isolation at a layer distance of 10 μm and a dense chip-by-chip integration on the GaN half-bridge module enable a compact lateral commutation loop design combined with improved cooling capability of the power transistors. Consequently, the GaN half-bridge module allows for higher load currents at lower device temperature while most parasitic circuit elements are reduced compared to a conventional printed circuit board (PCB) design. The parasitic circuit elements of the GaN half-bridge module and a reference four-layer PCB half-bridge are evaluated using 3D-FEM field simulation and in-circuit measurements. Selected finite element method (FEM) simulation results are validated by S -parameter measurements and further used to parametrize a lumped commutation loop model. The thermal characterization of the GaN half-bridge module validates the improved cooling capability of the GaN half-bridge power module. Transient switching characteristics are studied in hard-switching mode. The device temperature and converter efficiency are evaluated in dc/dc buck-converter operation.