학술논문
The growth and radiation response of n/sup +/p deep homojunction InP solar cells
Document Type
Conference
Author
Source
Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) Photovoltaic energy conversion Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on. 2:2192-2195 vol.2 1994
Subject
Language
Abstract
InP solar cells grown by metal organic chemical vapor deposition (MOCVD) exhibit a higher beginning of life efficiency (BOL) than InP solar cells grown by thermally diffused junctions (DJ). However, cells grown by MOCVD do not display the nearly complete recovery in photovoltaic (PV) parameters upon annealing that DJ cells do. To investigate the cause of this different behavior the Research Triangle Institute (RTI), contracted by the Naval Research Laboratory, fabricated epitaxial MOCVD InP solar cells with nonuniform dopant profiles grown to mimic the structure of the DJ cell with the goal that these cells would also show the DJ cell's annealing characteristics. Cells were grown on both B and oriented InP substrates to see if this would influence the cell's radiation resistance. Preliminary results of the effect of 1 MeV electron irradiation on the PV parameters of both kinds of cells are presented.