학술논문
A 28-GHz Passive Outphasing Load Modulator in 40-nm GaN
Document Type
Conference
Author
Source
2021 IEEE MTT-S International Microwave Symposium (IMS) Microwave Symposium (IMS), 2021 IEEE MTT-S International. :610-613 Jun, 2021
Subject
Language
ISSN
2576-7216
Abstract
This paper presents a passive tunable matching network for load-modulation of a power amplifier (PA). With a set of discrete RF switches, different real impedance transformations can be realized to optimize the loadline match of the PA for output power and/or efficiency. To handle high-power, a 40-nm GaN MMIC process was used to realize three RF switches that switch across a ring impedance network. The tunable matching network realizes 15, 50, or 80Ω depending on the switch state with insertion loss (IL) between 1.7 and 3.3 dB at a center frequency of 28 GHz. The GaN devices have a high breakdown point and therefore the network P 1 dB exceeds 33 dBm. The bandwidth of the network exceeds 2.5 GHz.